Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE

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<jats:title>ABSTRACT</jats:title><jats:p>A newly reported narrow bandgap for indium nitride means that the indium gallium nitride system of alloys can be a candidate for new high efficiency solar cells covering most of the solar spectrum. In this paper, n-InN films were grown on p-Si (100) substrates. We characterize, for the first time, photovoltaic properties using n-InN/p-Si hetero-junction grown by RF-MBE.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 798 2003-01-01

    Springer Science and Business Media LLC

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