Femtosecond laser-induced pre-damage dynamics in Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>mirror
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説明
ABSTRACT UV femtosecond laser pulse was used to excite the ultrafast carrier dynamics inside the Al 2 O 3 /SiO 2 high reflective mirror. Spectral shift between two di fferent laser induced free electron absorption ba ndswas observed. The former one centered at 406 nm undergo a fast decay of ~2.6 ps and a longer one of~15 ps. Acc ompanied by the fast decay of the first absorption band, a new absorption band centered at39 6 nm grew around ~2.8 ps after the laser excitation. The probable explanation the observed spectral shift of the free electron absorption band is that, the free carrier in the Al 3 O 2 conductive band wastrapped into some kind of defect state, which has an absorption peak at 396 nm, at a time scale of ~2.8 ps. Since the defect state has much longer lifetime than the initial generated free carriers in theeconductive band, probably under the condition of ultrafast high-frequency pulsed UV laser exposure,the incubation effect will decrease the laser damage threshold of the subsequent laser pul ses. Keywords: laser damage, femotosecond lasers, UV as er induced dynamics, dielectric materials
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- SPIE Proceedings
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SPIE Proceedings 9532 953209-, 2015-07-14
SPIE