Oxidation of Single Crystals of Hafnium Carbide in a Temperature Range of 600° to 900°3C

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<jats:p>The isothermal oxidation of HfC single crystals with (100) orientation was carried out using an electromicrobalance at temperatures of 600° to 900°3C at an oxygen pressure of 2 to 8 kPa. Nonisothermal oxidation was performed by a simultaneous thermogravimetry—differential thermal analysis—mass spectrometry analysis. A polished cross section of the oxidized crystal was observed by backscattered electron imaging in a scanning electron microscope. Quantitative chemical analysis for Hf, O, and C and their elemental profiles in the HfC and oxide scale was carried out by wavelength dispersive X‐ray microanalysis. It was found that the oxide scale consists of two regions, zones 1 and 2, both of which showed the existence of carbon. The carbon content at the middle point of zone 1 was about twice that in zone 2, which contained 7 to 14 at.% carbon. Zone 1 showed an almost compact and pore‐free phase; its thickness remained constant (1 to 2 μm) after a prolonged time. The thickness of zone 2 increased linearly with time. The oxidation mechanism including interfacial reaction responsible for the deposition of carbon is discussed.</jats:p>

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