Carbon Doping into GaAs Using Low-Energy Hydrocarbon Ions

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説明

<jats:title>Abstract</jats:title><jats:p>The role of hydrogen (H) in carbon (C)-doped GaAs was examined by co-doping of C and H atoms using low-energy hydrocarbon (CH<jats:sup>+</jats:sup> and CH<jats:sub>3</jats:sub>+) ions. Experiments were carried out using the combined ion beam and molecular beam epitaxy (CIBMBE) system. Samples were characterized by low-temperature photoluminescence at 2K and Hall effect measurements at room temperature. Results show that incorporated C atoms are optically and electrically activated as acceptors even by hydrocarbon ion impingement. The effect of H incorporation was found to be noticeable when impinged current density of CH<jats:sub>3</jats:sub>+ ion beam is high that produces equivalent net hole carrier concentration greater than ∼10<jats:sup>18</jats:sup> cm<jats:sup>−3</jats:sup></jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 510 1998-01-01

    Springer Science and Business Media LLC

詳細情報 詳細情報について

  • CRID
    1870020692762858880
  • DOI
    10.1557/proc-510-61
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

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