Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation
説明
Si wafers are successfully bonded at room temperature by Ar beam surface etching in ultra high vacuum. The bonding interface was investigated by transmission electron microscope (TEM). Residual strain originated from surface roughness is observed in the interface region. The residual strain is relaxed by low temperature annealing. An amorphous-like intermediate layer exists at the interface. The layer is different from the oxide layer which often observed at Si/Si interface prepared by the conventional wafer bonding. It is supposed that damages by Ar atom impact formed this layer, because thickness of the layer changes according to kinetic energy of Ar beam. This layer is quite instable. Low temperature annealing or electron beam irradiation during TEM observation cause recrystallization of the layer. Therefore, the residual stress and the intermediate layer are observed only in the specimens which is not subjected any heat treatments.
収録刊行物
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- Materials Science Forum
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Materials Science Forum 294-296 341-344, 1998-11-01
Trans Tech Publications, Ltd.