Reduction of Auger effect by GaSb quantum well lasers in the 1.5 microm wavelength region

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Abstract The possibility of reducing the Auger effect is studied theoretically through the introduction of GaSb quantum well lasers in the 1.5 microm wavelength region. The theoretical formula for the Auger rate calculation in a quantum well structure including the carrier screening effect is deduced. Using this formula, the laser threshold current density and the quantum efficiency are calculated for GaSb/AlSb quantum well lasers. The quantum efficiency and the characteristic temperature for the temperature dependence of the threshold current are found to be higher than 50% and 100 K at the photoemission wavelength region longer than 1.5 microm.

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