Downscaled graphene nanodevices: Fabrication and ab initio study
説明
In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He+ ion beam. We then study the effects of the He+ ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.
収録刊行物
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- 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology 1-4, 2012-10-01
IEEE