Ultra-low contact resistance metallization by a silicidation technology employing a silicon capping layer for protection against contamination
説明
An ultra low contact resistance metallization process has been developed by employing Ta silicidation of Si contact surface by ion beam mixing through a tantalum film covered with a Si capping layer. The as-deposited Ta surface is protected in-situ by a very thin Si film in order to prevent the metal surface from being oxidized or contaminated during subsequent processing. As a result, completely native-oxide-free contact metallization has been established. By combining the oxide-free Si/metal-on-Si deposition and ultraclean ion implantation for ion mixing, an ultra low contact resistance of 3.3/spl times/10/sup -9/ (/spl Omega/ cm/sup 2/) has been achieved. >
収録刊行物
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- Proceedings of 1994 VLSI Technology Symposium
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Proceedings of 1994 VLSI Technology Symposium 63-64, 2002-12-17
IEEE