Well-width dependence of Stark effect in ZnSe-ZnCdSe multiple quantum well modulators
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説明
We report the effect of the well width on room temperature operation of II-VI p-i-n quantum Stark effect modulators using ZnSe-ZnCdSe multiple quantum well structures within ZnSe p-n junctions. Results are given for the theoretical calculation of exciton binding energy and Stark shift, absorption and differential absorption as a function of the applied electric field. An optimum well width is estimated in current structures for the achievement of the largest (Delta) T/T by means of both theoretical and experimental approaches.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 2364 267-, 1994-10-26
SPIE