Self-assembled growth of ordered GaAs nanostructures

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Description

<jats:p>The authors have fabricated an ordered array of GaAs nanoislands using the network of misfit dislocations at the InAs∕GaAs(111)A interface. Ga nanoislands are preferably formed at compressively strained regions between buried dislocations. GaAs nanoislands fabricated by supplying As4 flux to the Ga islands also show a high degree of ordering, while simultaneous deposition of Ga and As results in random nucleation of GaAs nanoislands.</jats:p>

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Details 詳細情報について

  • CRID
    1870020692964705920
  • DOI
    10.1063/1.2338530
  • ISSN
    10773118
    00036951
  • Data Source
    • OpenAIRE

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