1MeV electron irradiation effects of GaAs/Si solar cells
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説明
<jats:title>ABSTRACT</jats:title><jats:p>The characteristics of 1 MeV electron irradiated GaAs solar cells grown on GaAs and Si substrates are studied under dark and AM 0 conditions. The short circuit currents (I<jats:sub>sc</jats:sub>) for GaAs/GaAs cell and GaAs/Si cell have been decreased at higher fluences. The degradation rate of V<jats:sub><jats:italic>oc</jats:italic></jats:sub> and Pmax for GaAs/Si is slower than that of GaAs/GaAs at the fluence 1×10<jats:sup>16</jats:sup> cm<jats:sup>−2</jats:sup>. This is due to the high radiation resistance of saturation current. It has been due to slow generation of arsnic vacancies related defect (<jats:italic>V</jats:italic><jats:sub><jats:italic>As</jats:italic></jats:sub>) in the GaAs/Si solar cell, which is determined by photoluminescence analyses and deep level transient spectroscopy.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 836 2004-01-01
Springer Science and Business Media LLC
