Reduction of Whisker-Originated Short between W Polymetal and Contact Plug
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<jats:title>ABSTRACT</jats:title><jats:p>Whisker-originated short in the self-aligned contact (SAC) W polymetal gate was directly observed for the first time. Short points between gate electrodes and poly-Si plugs in the test structure were identified by emission microscope and cross-sectional TEM samples of those points were made by using focused ion beam (FIB).</jats:p><jats:p>Whiskers are formed during high-temperature processing such as LP-CVD SiN. We have proposed that NH<jats:sub>3</jats:sub> de-oxidation step inserted in the SiN deposition sequence is effective for suppressing whisker growth. [1] In this study it was also confirmed that 600°C NH 3 pre-flow improved leakage current between gate electrode and contact plugs.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 670 2001-01-01
Springer Science and Business Media LLC