Reduction of Whisker-Originated Short between W Polymetal and Contact Plug

この論文をさがす

説明

<jats:title>ABSTRACT</jats:title><jats:p>Whisker-originated short in the self-aligned contact (SAC) W polymetal gate was directly observed for the first time. Short points between gate electrodes and poly-Si plugs in the test structure were identified by emission microscope and cross-sectional TEM samples of those points were made by using focused ion beam (FIB).</jats:p><jats:p>Whiskers are formed during high-temperature processing such as LP-CVD SiN. We have proposed that NH<jats:sub>3</jats:sub> de-oxidation step inserted in the SiN deposition sequence is effective for suppressing whisker growth. [1] In this study it was also confirmed that 600°C NH 3 pre-flow improved leakage current between gate electrode and contact plugs.</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 670 2001-01-01

    Springer Science and Business Media LLC

詳細情報 詳細情報について

  • CRID
    1870020693121052800
  • DOI
    10.1557/proc-670-k5.6
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

問題の指摘

ページトップへ