Current collapse in AlGaN/GaN HEMTs with a GaN cap layer
説明
This paper describes electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with a GaN cap layer. The maximum drain current was kept constant at around 0.4 A/mm for a GaN cap layer thickness up to 5 nm. It was found that the degree of current collapse was gradually improved when the GaN cap thickness was increased from 0 (without cap) to 10 nm.
収録刊行物
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- 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) 48-49, 2015-06-01
IEEE