Infrared Spectra of Ultra-Thin SiO<sub>2</sub> Grown on Si Surfaces

DOI

Search this article

Description

<jats:title>ABSTRACT</jats:title><jats:p>The structure of thin SiO<jats:sub>2</jats:sub> films thermally grown on Si(100) and Si(111) surfaces has been characterized by using infrared internal reflection and x-ray photoelectron spectroscopy. It is found that the infrared absorption peak due to the LO phonon mode originating from the Si-O-Si stretching vibration shows a considerable red shift in the thickness range below 30A. This red shift is interpreted in terms of the compressive stress near the interface.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 318 1993-01-01

    Springer Science and Business Media LLC

Details 詳細情報について

Report a problem

Back to top