Fabrication and characterization of InAs/AlGaSb quantum wire transistors
説明
Fabrication of InAs/AlGaSb quantum wire transistors (QWTs) and quasi-one-dimensional (1D) transport properties are reported. Low-dimensional electron transport properties were characterized by magneto-transport measurements at 4.2 K. We have succeeded in a decent demonstration of QWTs with narrow channels down to 100 nm width. The transconductance in multiple QWTs with various wire width are compared to discuss 1D electron transport properties.
収録刊行物
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- Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)
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Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) 667-670, 2002-11-27
IEEE