Enhancement of Long-Wavelength Photoluminescence Due to Heat-Treatment in Si-Doped GaAs

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<jats:title>ABSTRACT</jats:title><jats:p>Highly officient radiative recombination even at room temperature was found at a wavelength of about 1.3 μm in heat-treated Si-doped GaAs. The range of Si concentrations and the condition of heat-treatment to yield this intense luminescence were determined. Excitation spectra of the PL lines suggest that such PL lines are related to pairs of Si-donor and Si- acceptor and such pairs combined with gallium vacancies.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 262 1992-01-01

    Springer Science and Business Media LLC

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