Toward 0.1V operation of MOSFETs for ultra-low power applications
説明
For the ultra-low voltage operation as low as 0.1V, a new device concept, Vth self-adjusting MOSFETs with floating gate (FG), is proposed and experimentally demonstrated. The charges are injected to/from FG and Vth increases at the off-state while Vth decreases at the on-state resulting in higher on/off ratio and stable circuit operation at ultra-low voltage. The Vth adjustment as well as improved SRAM cell stability at 0.1V is successfully demonstrated.
収録刊行物
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- 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
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2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 1-4, 2014-10-01
IEEE