Growth and Field Emission of Single‐Crystalline Hafnium Carbide Nanowires

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<jats:sec><jats:label /><jats:p><100>‐oriented hafnium carbide (HfC) nanowires are synthesized on the graphite substrate by chemical vapor deposition. The dependence of temperature, HfCl<jats:sub>4</jats:sub>content, and flow rate of CH<jats:sub>4</jats:sub>gas on the morphology of nanowires is investigated herein. The results indicate that the HfC nanowire often kinks to another growth direction at a high HfCl<jats:sub>4</jats:sub>content or a low temperature due to the destabilization of the catalyst droplet induced by either a faster growth rate or slower thermal activation. Reduced nanowire density and length are observed at the sample synthesized at a lower CH<jats:sub>4</jats:sub>flow rate. Based on the experimental results, high‐crystallinity nanowires with high aspect ratios and high densities are prepared at a lower HfCl<jats:sub>4</jats:sub>content, higher temperature, and high CH<jats:sub>4</jats:sub>flow rate. The field‐emission properties of a single HfC nanowire are also characterized by assembling a single HfC nanowire emitter. An extremely high field enhancement factor of 5.57 × 10<jats:sup>6</jats:sup> m<jats:sup>−1</jats:sup>is obtained herein.</jats:p></jats:sec>

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