A highly reliable sub-half-micron via and interconnect technology using Al alloy high-temperature sputter filling

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A technology using Al-Si-Cu alloy high-temperature sputter filling and a thin Ti underlayer to prevent Si from precipitating is discussed. Complete filling of a 0.15- mu m-diameter via with aspect ratio of 4.5 has been achieved. The resistance of the 0.3- mu m sputter filled via was 0.71 Omega . This is about one order of magnitude lower than that for a conventional via. The electromigration resistance of the 0.3- mu m filled via was found to be four orders of magnitude greater than that of the conventional vias. Superior stress-induced migration resistance of 0.5- mu m wide lines was confirmed. >

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