An Atomistic Computer Simulation of Crack Extension in Cubic Silicon Carbide

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<jats:title>Abstruct</jats:title><jats:p>An atomistic computer simulation of mode I crack extension in cubic silicon carbide has been performed using a realistic many–body interatomic potential computed by Tersoff. The crack front is parallel to the [1<jats:overline>1</jats:overline>0] direction and the crack plane lies in the (111) plane. The stable crack tip configurations were calculated and the effective stress intensity factor and the effective crack tip position were evaluated in the relaxed atomic configuration by the least-square method. The crack was stable over a wide range of the stress intensity factors from 0. 6K<jats:sub>G</jats:sub> to 3. 4K<jats:sub>G</jats:sub>, where K<jats:sub>G</jats:sub> is the Griffith critical stress intensity factor. At 3.5K<jats:sub>G</jats:sub> an interatomic bond near the tip across the (001) plane ruptured and the crack advanced. When the crack is stable, the effective K is larger than the given K by nearly 0. 2K<jats:sub>G</jats:sub> to 0.4K<jats:sub>G</jats:sub>. Crack tip process was also simulated over a range of temperatures. At 1000K. secondary cracks were nucleated and grew like voids around the main crack, and thus the main crack was blunted.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 278 1992-01-01

    Springer Science and Business Media LLC

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