Electrical transport properties of alkali-metal/halogen encapsulated single-walled carbon nanotubes
説明
The encapsulation of alkali-metal or halogen inside single-walled carbon nanotubes (SWNTs) can be realized by a novel alkali-halogen plasma irradiation method. According to electronic transport measurements, it is found that a p-type semiconductor behavior can be strongly improved by encapsulating iodine atoms. Furthermore, a p-n junction diode-like feature is observed by selective encapsulation of cesium and iodine atoms in one individual SWNT.
収録刊行物
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- 2007 7th IEEE Conference on Nanotechnology (IEEE NANO)
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2007 7th IEEE Conference on Nanotechnology (IEEE NANO) 643-646, 2007-08-01
IEEE