Growth of Diamond on Sapphire by Pulsed Laser Ablation under Oxygen Atmosphere
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説明
<jats:title>Abstract</jats:title><jats:p>We examined the possibility of nucleation and growth of diamond via a hydrogen-free vapor phase route of pulsed laser ablation of a graphite target in a low-pressure pure oxygen atmosphere. The present evidences from microscopic, diffraction and spectroscopic techniques indicate that high-quality (111)-oriented diamond crystals could be nucleated and grown on ultra smooth sapphire (single-crystal α - A1<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>)substrates at the temperatures lower than 600°C under the optimized growth conditions of oxygen pressure (around 0.15 Torn) and laser ablation (pulsed laser fluence of 3 x 10<jats:sup>8</jats:sup>W/cm<jats:sup>2</jats:sup>at 5<jats:italic>Hz</jats:italic>).</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 555 1998-01-01
Springer Science and Business Media LLC