Electrical Properties and Defect States of Laser Crystallized Polycrystalline Silicon Films

<jats:title>ABSTRACT</jats:title><jats:p>In this paper, changes in electrical properties of laser crystallized silicon films doped with 8.5×10<jats:sup>17</jats:sup>-cm<jats:sup>−3</jats:sup>-phosphorus atoms as a function of laser shot number are investigated. The samples are treated with plasma hydrogenation for 30 sec at 130 Pa at 250 °C and additional H2O vapor heat treatment at 260 °C for 3 hours with 1.3 MPa. The electrical conductivity at room temperature become about 10<jats:sup>−6</jats:sup>∼10<jats:sup>−-5</jats:sup> S/cm as laser shot number increases from 1 to 100. After hydrogenation and additional H<jats:sub>2</jats:sub>O vapor heat treatment, electrical conductivity remarkably increases to 10<jats:sup>0</jats:sup>∼10<jats:sup>1</jats:sup>S/cm. At laser irradiation of 20 or 50 shots after both treatments, the density of defect at deep level states and tail states are determined 1.15×10<jats:sup>17</jats:sup> cm<jats:sup>−3</jats:sup> and 5.7×10<jats:sup>17</jats:sup>cm<jats:sup>−3</jats:sup> using an analysis program. Potential barrier height at grain boundary is 0.048 eV. The effective carrier density and carrier mobility are markedly increased up to10<jats:sup>17</jats:sup>cm<jats:sup>−3</jats:sup> and 209 cm<jats:sup>2</jats:sup>/Vs by hydrogenation and additional H<jats:sub>2</jats:sub>O vapor heat treatment.</jats:p>