Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy
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<jats:title>Abstract</jats:title><jats:p>Planar Pt/AlGaN/GaN Schottky barrier diodes (SBDs) have been characterized by capacitance-voltage and capacitance deep-level optical spectroscopy measurements, compared to reference Pt/GaN:Si SBDs. Two specific deep levels are found to be located at ∼1.70 and ∼2.08 eV below the conduction band, which are clearly different from deep-level defects (<jats:italic>E<jats:sub>c</jats:sub></jats:italic> - 1.40, <jats:italic>E<jats:sub>c</jats:sub></jats:italic> - 2.64, and <jats:italic>E<jats:sub>c</jats:sub></jats:italic> - 2.90 eV) observed in the Pt/GaN:Si SBDs. From the diode bias dependence of the steady-state photocapacitance, these levels are believed to stem from a two-dimensional electron gas (2DEG) region at the AlGaN/GaN hetero-interface. In particular, the 1.70 eV level is likely to act as an efficient generation-recombination center of 2DEG carriers.</jats:p>
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- MRS Proceedings
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MRS Proceedings 1202 2009-01-01
Springer Science and Business Media LLC