High-frequency characteristics of a quantum well diode
説明
High-frequency characteristics of a quantum well (QW) diode with thermionic electron transport are reported. The frequency-dependent admittance of the QW diode is obtained using a rigorous self-consistent small-signal analysis. The frequency dependencies of the QW diode capacitance and conductance are governed by a characteristic time of the recharging of the QW, which depends strongly on temperature and device structural parameters. Experimental data on conductance and capacitance of the QW diode as functions of temperature and frequency can be used to extract the parameters of the QW, such as QW recombination velocity and ionization energy.
収録刊行物
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- ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings
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ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings 154-157, 2002-12-24
IEEE
