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Hot-Wall CVD Growth of 4H-SiC Using Si<sub>2</sub>Cl<sub>6</sub>+C<sub>3</sub>H<sub>8</sub>+H<sub>2</sub> System
Journal
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- Materials Science Forum
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Materials Science Forum 389-393 199-202, 2002-04-01
Trans Tech Publications, Ltd.
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Details 詳細情報について
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- CRID
- 1870302167764313216
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- ISSN
- 16629752
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- Data Source
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- OpenAIRE
