Quantum Spin Hall States and Topological Phase Transition in Germanene

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  • Pantelis Bampoulis
    Physics of Interfaces and Nanomaterials, MESA+ Institute, University of Twente, Drienerlolaan 5, 7522 NB, Enschede, Netherlands
  • Carolien Castenmiller
    Physics of Interfaces and Nanomaterials, MESA+ Institute, University of Twente, Drienerlolaan 5, 7522 NB, Enschede, Netherlands
  • Dennis J. Klaassen
    Physics of Interfaces and Nanomaterials, MESA+ Institute, University of Twente, Drienerlolaan 5, 7522 NB, Enschede, Netherlands
  • Jelle van Mil
    Physics of Interfaces and Nanomaterials, MESA+ Institute, University of Twente, Drienerlolaan 5, 7522 NB, Enschede, Netherlands
  • Yichen Liu
    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
  • Cheng-Cheng Liu
    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
  • Yugui Yao
    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
  • Motohiko Ezawa
    Department of Applied Physics, University of Tokyo, Hongo, 113-8656 Tokyo, Japan
  • Alexander N. Rudenko
    Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen, Netherlands
  • Harold J. W. Zandvliet
    Physics of Interfaces and Nanomaterials, MESA+ Institute, University of Twente, Drienerlolaan 5, 7522 NB, Enschede, Netherlands

書誌事項

公開日
2023-05-12
権利情報
  • https://link.aps.org/licenses/aps-default-license
  • https://link.aps.org/licenses/aps-default-accepted-manuscript-license
DOI
  • 10.1103/physrevlett.130.196401
  • 10.21203/rs.3.rs-2135721/v1
公開者
American Physical Society (APS)

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<jats:title>Abstract</jats:title> <jats:p>The realization of the topological field-effect transistor requires an electric field-induced transition from a topological state with dissipationless conductive channels (`On') to a trivial insulator state (`Off'). Monoelemental and buckled quantum spin Hall insulators with large topological band gaps are ideal candidates to investigate topological phase transitions. We provide compelling experimental evidence that low-buckled epitaxial germanene is a quantum spin Hall insulator with a large bulk gap and robust metallic edge states. The low-buckled structure of germanene allows for topological phase transitions to take place. Upon the application of a critical transversal electric field, the topological gap closes and germanene becomes a Dirac semimetal. Increasing the electric field further results in opening of a trivial gap and disappearance of the edge states. This reversible electric field-induced switching of the topological state and the sizeable gap make germanene suitable for room-temperature topological field-effect transistors, which could revolutionize low-energy electronics and spintronics.</jats:p>

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