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- Kentaro Kuga
- Toyota Technological Institute 1 , Nagoya, Aichi 468-8511, Japan
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- Keisuke Hirata
- Toyota Technological Institute 1 , Nagoya, Aichi 468-8511, Japan
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- Masaharu Matsunami
- Toyota Technological Institute 1 , Nagoya, Aichi 468-8511, Japan
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- Tsunehiro Takeuchi
- Toyota Technological Institute 1 , Nagoya, Aichi 468-8511, Japan
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説明
<jats:p>We report the low temperature thermoelectric properties in the valence fluctuating system Yb3Si5 using high-quality single crystals. The coexistence of the tiny residual resistivity of 0.06 μΩ cm and the considerable Seebeck coefficient of 9 μV K−1 at 7 K leads to a huge Peltier conductivity of 40 A cm−1 K−1 and a power factor of 40 mW m−1 K−2. These pronounced characteristics are possibly attributed to the uncompensated semimetallic state in addition to the valence fluctuation of Yb ions. The large size of Yb3Si5 single crystal, which is typically ϕ 0.5–1 mm in diameter and 10 mm in length, enables the realistic application to the cryogenic thermoelectric device.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 123 (20), 2023-11-13
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360302865557103872
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- ISSN
- 10773118
- 00036951
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- 資料種別
- journal article
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- データソース種別
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- Crossref
- KAKEN
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