Effect of surface passivation on breakdown of AlGaN/GaN HEMTs
説明
We have investigated the effect of surface passivation on breakdown by electrical characterization and electroluminescence (EL) measurements of AlGaN/GaN HEMTs.
収録刊行物
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- 2003 International Symposium on Compound Semiconductors
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2003 International Symposium on Compound Semiconductors 169-170, 2004-01-24
IEEE
