Incubation Time Free CVD-TiO<sub>2</sub> Film Preparation Using Novel Precursor of Ti-DOT

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<jats:title>ABSTRACT</jats:title><jats:p>Titanium oxide thin films were deposited at 250 – 400 <jats:sup>°</jats:sup>C on amorphous SiO<jats:sub>2</jats:sub> prepared on n-type Si substrates by chemical vapor deposition (CVD) using a novel precursor, ethene-1,2-diylbis(<jats:italic>tert</jats:italic>-butylaminido)diisopropoxotitanium [Ti[N(<jats:italic><jats:sup>t</jats:sup></jats:italic>Bu)C=CN(<jats:italic><jats:sup>t</jats:sup></jats:italic>Bu)](O<jats:italic><jats:sup>i</jats:sup></jats:italic>Pr)<jats:sub>2</jats:sub> , Ti-DOT], with oxygen gas as an oxidant. Deposition characteristics of thin films were compared with those using titanium tetraisopropoxide [Ti(O<jats:italic><jats:sup>i</jats:sup></jats:italic>Pr)<jats:sub>4</jats:sub>, TTIP]. As a result, the deposition amount of TiO<jats:sub>2</jats:sub> thin films using Ti-DOT was larger than that of TTIP because of the shorter incubation time in the case of Ti-DOT. Smaller surface roughness was observed for the films using Ti-DOT. In addition, a good conformability was obtained on amorphous SiO<jats:sub>2</jats:sub> hole prepared on n-type Si substrate substrate with aspect ratio of 5.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 1288 2011-01-01

    Springer Science and Business Media LLC

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