Low damage GaInAsP/InP nano-structures by CH/sub 4//H/sub 2/ reactive ion etching and its application to low threshold gain-coupled DFB lasers
説明
Low damage GaInAsP/InP narrow wire structures with good vertical mesa shape were realized by CH/sub 4//H/sub 2/-reactive ion etching followed by a slight wet chemical etching and organo-metallic vapor phase epitaxy. The damage property of this fabrication process was characterized by the product of the sidewall recombination velocity and the carrier lifetime, which was measured from the wire width dependence of the photoluminescence intensity, to be 28 nm at room temperature. By using this fabrication process, 1.55 /spl mu/m wavelength five-quantum-well distributed feedback (DFB) laser with a threshold current density as low as 330 A/cm/sup 2/ (66 A/cm/sup 2//well, @L=860 m) was obtained. To our knowledge this is the lowest value reported for 1.55 /spl mu/m GaInAsP/InP DFB lasers fabricated by dry etching process.
収録刊行物
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- Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)
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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) 349-352, 2003-01-20
IEEE