Emission characteristics of a gallium arsenide wedge emitter monolithically fabricated with an air bridge and a cantilever anode
説明
GaAs wedge emitters with an air bridge and a cantilever anode were monolithically fabricated using a micromachining technique. The threshold voltage of electron emission is about 8 V for the air bridge emitter, while only 1.5 V for the cantilever emitter. The current-voltage characteristic of the air bridge emitter is due to a field emission, while that of the cantilever emitter is recognized as direct tunneling of electrons through the reduction of the air gap between the emitter and cantilever by electrostatic force.
収録刊行物
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- IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586)
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IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586) 129-130, 2002-11-13
IEEE