Fabrication of InGaAsP/InP Mach-Zehnder interferometer optical amplifier switches by metalorganic vapor phase selective area epitaxy
説明
Recent ultra-fast optical-fiber communication systems require various functional optical components, such as all optical switches. We have fabricated InGaAsP/InP Mach-Zehnder interferometer optical switches monolithically integrated with semiconductor optical amplifiers (SOAs) using a single-step MOVPE selective area growth and two types of patterning and etching process. Preliminary optical switching experiment revealed large carrier-induced index change in the selective-area-grown multiple quantum well SOAs. Furthermore, all optical switching experiment has successfully been demonstrated in these fabricated devices.
収録刊行物
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- Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
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Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) 583-586, 2002-11-13
IEEE