Dependence of deposition selectivity for MOVPE of AlGaAs using HCl gas on the orientation of the substrate and the orientation of the stripe of SiN masks
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説明
Abstract The conditions required to avoid MOVPE growth of AlGaAs on SiNx masks used to define windows has been investigated as a function of the orientation of the substrate, the orientation of the stripe as well as the temperature in the presence of HCl gas. The selectivity is enhanced for growth on (100) vicinal surfaces and particularly for higher growth temperatures. The selectivity is considered to be related to the atomic bonding geometry in the window and on the volatility of the group III halides.
収録刊行物
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- Journal of Crystal Growth
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Journal of Crystal Growth 170 679-684, 1997-01-01
Elsevier BV
