Removable External Seeding for Solid phase Epitaxy of Amorphous Silicon on Glass Substrates

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<jats:title>ABSTRACT</jats:title><jats:p>A new method for obtaining a planar silicon film on glass substrates (SOG) with controlled crystal orientation has been introduced. This technique uses solid phase epitaxy (SPE) with external seed to fabricate the orientation-controlled SOG structure. Heat treatment of amorphous SOG substrate in contact with mesa striped Si seed crystal was performed at 540°C for 16 hours to form the SPE layer. The planar surface of the SOG structure is due to the most important feature of the present technique-the separation of the seed from the substrate after SPE.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 237 1991-01-01

    Springer Science and Business Media LLC

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