A 256-Gbps PAM-4 Signal Generator IC in <tex>$0.25-\mu \text{m}$</tex> InP DHBT Technology
説明
This paper presents a 256-Gbps (128-GBaud) four-level pulse amplitude modulation (PAM-4) signal generator (SG) IC fabricated using developed $0.25- \mu\text{m}$ -emitter-width InP double heterojunction bipolar transistors (DHBTs), which have a peak $f_{\text{T}}$ and $f_{\max}$ of 460 and 480 GHz, respectively. The IC is based on a 128-GS/s 2-bit R2R-ladder current-steering digital-to-analog converter (DAC) with integrated two 2:1 multiplexer (MUX) functions. Ultrahigh-speed clear PAM-4 signals of up to 256 Gbps (128 GBaud) were successfully generated using this PAM-4 SG IC. To the best of our knowledge, this is the first demonstration of 256-Gbps (128-GBaud) PAM-4 signal generation without any equalization.
収録刊行物
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- 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) 28-31, 2018-10-01
IEEE