Preparation and properties of [111]-oriented PLT films by RF magnetron

[111]-oriented PLT films have been successfully grown onto platinum film substrates by the rf-magnetron sputtering method using Pb enriched PLT (85/15) powder targets. The sputtering conditions for growing [111]-oriented films were investigated. Crystallographic identifications of the films were made by the X-ray measurements. Dielectric, ferroelectric and pyroelectric properties of these films were measured. The dielectric constant of the highly [111]-oriented PLT film showed an anomaly at the transition point of around 300 degree(s)C and its value at room temperature was large as 1070, indicating that the PLT thin film with La rich composition is also available for the DRAM because of its large dielectric constant. The D-E hysteresis loops measurement has been carried out using the Sawyer-Tower circuit at 60 Hz. The asymmetric hysteresis loops were observed. The Pr and Ec were 8.5 (mu) C/cm2 and 78 kV/cm, respectively. The pyroelectric coefficient of this film was determined as 30nC/cm2K even without a poling treatment. [111]-oriented PLT films sputtered on Pt/Ti/silicon substrates possess desirable properties for potential applications to pyroelectric and memory devices.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.