Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector

この論文をさがす

説明

Radiation hardness of 6H silicon carbide (SiC) p + n diode particle detectors has been studied. The charge collection efficiency (CCE) of the detectors decreases with the increased fluence of electrons with energies of 0.2 MeV and higher. Defect X 2 with an activation energy of 0.5 eV was found in all detectors which showed the decreased CCE. The decreased CCE was restored to the initial value by thermal annealing of defect X 2 . It is concluded that defect X 2 is responsible for the decreased CCE of 6H-SiC p + n diode particle detectors.

収録刊行物

詳細情報 詳細情報について

  • CRID
    1870302168095042688
  • DOI
    10.1117/12.2016464
  • ISSN
    0277786X
  • データソース種別
    • OpenAIRE

問題の指摘

ページトップへ