High Resistivity Oxygen-Doped AlGaAs For Power Devices
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説明
<jats:title>Abstract</jats:title><jats:p>We have succeeded in making high resistive Al<jats:sub>x</jats:sub>Ga<jats:sub>1−x</jats:sub>As by oxygen doping (Al<jats:sub>x</jats:sub>Ga<jats:sub>1−x</jats:sub>As:O) and applying them to buffer layer for power metal-semiconductor field effect transistor (MESFET). Samples of Al<jats:sub>0.3</jats:sub>Ga<jats:sub>0.7</jats:sub>As:O were prepared by metalorganic vapor phase epitaxy (MOVPE). Oxygen-related levels in A1<jats:sub>0.3</jats:sub>Ga<jats:sub>0.7</jats:sub>As:O were investigated by applying isothermal capacitance transient spectroscopy (107S) to MIS (Al/Al<jats:sub>0.3</jats:sub>Ga<jats:sub>0.7</jats:sub>As:O/n-GaAs) diodes. A breakdown voltage and a two terminal gate breakdown voltage of the MESFET with the Al<jats:sub>0.3</jats:sub>Ga<jats:sub>0.7</jats:sub>As:O buffer layer became higher as increasing in the intensity of oxygen related peak in the ICTS spectra. These results indicate that the electrically active oxygen in the Al<jats:sub>1−x</jats:sub>Ga<jats:sub>1−x</jats:sub>As:O is an important factor for the device characteristics.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 483 1997-01-01
Springer Science and Business Media LLC