No spin polarization of carriers in InGaN
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説明
Abstract We report the spin polarization of carriers photoexcited in bulk InGaN by circularly polarized femtosecond optical pulses. No spin polarization is observed in the picosecond time region using spin-dependent pump and probe absorption measurements with a time resolution of 0.35 ps. This is in contrast to the existence of spin polarization in GaAs quantum wells or in InGaAs quantum wells which have a spin relaxation time in the picosecond time region. The unique band structure of InGaN, which has weak spin–orbit interaction, and an in-plane potential fluctuation due to the compositional inhomogeneity of In explains the lack of spin polarization.
収録刊行物
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- Physica E: Low-dimensional Systems and Nanostructures
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Physica E: Low-dimensional Systems and Nanostructures 7 1011-1014, 2000-05-01
Elsevier BV