Self-catalyzed InP Nanowires on Patterned Si Substrates

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説明

<jats:title>ABSTRACT</jats:title><jats:p>Self-catalyzed growth of position-defined InP nanowires (NWs) was investigated on SiO<jats:sub>2</jats:sub>-mask-pattered Si substrates using metalorganic vapor-phase epitaxy. Using low growth temperatures and high group-III flow rates, pyramidal InP NWs were formed vertically on the mask openings. The diameter and tapering of the InP NWs were successfully controlled by the introduction of HCl and H<jats:sub>2</jats:sub>S gases during the NW growth. In addition, crystal growth of radial InP/InAsP/InP quantum wells on the sidewall of the InP NWs was performed on Si substrates.</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 1751 2015-01-01

    Springer Science and Business Media LLC

詳細情報 詳細情報について

  • CRID
    1870302168284130048
  • DOI
    10.1557/opl.2015.477
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

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