Effects of Rapid Thermal Annealing on SiN<sub>x</sub> Capped MBE GaAs

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<jats:title>ABSTRACT</jats:title><jats:p>Effects of rapid thermal annealing (RTA) with a SiN<jats:sub>x</jats:sub> encapsulant on molecular beam epitaxial GaAs are studied with deep level transient spectroscopy (DLTS) measurements and x-ray photoelectron spectroscopy (XPS) measurements. The RTA was performed at various temperatures form 800°C to 1100°C for 6sec. The electron trap EL2 is produced by the RTA above 850°C The EL2 depth profile produced after the RTA is fitted with a complementary error function. The SiN<jats:sub>x</jats:sub> cap layer is more effective to prevent the formation of the EL2 than the SiO<jats:sup>*</jats:sup> cap layer during the RTA, because the critical temperature of the SiN<jats:sub>x</jats:sub> cap where the EL2 concentration starts to increase is higher than that of the SiO<jats:sub>x</jats:sub> cap. Slight increase of the oxidized Ga atoms is observed after the RTA near the cap surface. The enhancement of the EL2 trap is discussed considering the outdiffusion of Ga atoms into the cap layer during the RTA.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 262 1992-01-01

    Springer Science and Business Media LLC

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