Low temperature preparation of sol-gel PZT thin film annealed at 160°C by hydrothermal method
説明
Pb(Zr/sub 0.52/TiO/sub 0.48/)O/sub 3/ (PZT) thin films have been deposited on Pt/Ti/SiO/sub 2//Si substrate by sol-gel method with pre-baking at 300/spl deg/C, and then successfully crystallized at low temperature of 160/spl deg/C by hydrothermal annealing in mixture solution of KOH and Pb(OH)/sub 2/. Hydrothermally-annealed PZT films show good crystallinity with pure perovskite phase and are oriented to [111]. The surface and cross section observed by SEM show granulated structure of grain size of about 100 nm. The electric properties of the samples before post-baking and after post-baking were measured. The sample after post-baking shows good hysteresis loop with Pr=26.3 /spl mu/m/cm/sup 2/ and E/sub c/=40.1 kV/cm.
収録刊行物
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- ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076)
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ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076) 2 921-924, 2002-11-11
IEEE