Performance and fabrication of organic field effect transistors with soluble oligomers

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Abstract We fabricated an organic thin film prepared by oligom ers of organic material according to the solution method and examined the quality of thin film using an X-Ray diffract ometer. Based on the results, we fabricated flexible-organic field effect transistors using the spin-coating method. We adopted a polyethylenenaphthalate (PEN) film as the substrate, a cross-linked poly-4-vinylphenol (PVP) thin film as the gate dielectric insulation layer and a soluble quaterthiophene layer or pentacene layer as an active layer. The carrier mobility of the prepared quaterthiophene- organic-field effect transistor, the threshold voltage and the ON/OFF ratio are 2.27×10-3 cm 2 /Vs, -37V and -37V respectively. In soluble Pentacene-OFET, the mobility is 0. 09cm²/Vs, the ON /OFF is about 10 2 and the threshold voltage (Vth) is -7V . Keywords: soluble quaterthiophene, polyethylenenaphthalate, cross-linked poly-4-vinylphenol, soluble Pentacene-OFET, X-Ray diffractometer, spin coating method 1. Introduction

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