Xps and Aes Studies of the Initial Stage of CdTe Growth on (100) GaAs by Movpe
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<jats:title>ABSTRACT</jats:title><jats:p>XPS and AES analyses were performed to investigate the initial growth mechanism and the selection of the growth orientations of CdTe layers grown on (100) GaAs substrates by MOVPE. The (100) CdTe growth was reproducibly achieved when the GaAs surface was completely covered by one monolayer of Te before the growth, otherwise (111) growth occurred.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 198 1990-01-01
Springer Science and Business Media LLC
