Electroluminescence from Single 3D GaN Nanowire Grown by Self-Catalytic Molecular Beam Epitaxy
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説明
<jats:title>ABSTRACT</jats:title><jats:p>3-D branching GaN nanowires have been grown using the intermediate and Ga-rich growth regimes of plasma assisted molecular beam epitaxy. Evidence that the growth is due to an auto-catalytic VLS process is obtained through SEM images showing droplet termination heads, the composition of which is essentially pure Ga. TEM analysis revealed a defect free crystal structure, even in the trunk to branch junction. Cathodoluminescence from the trunk of the branching nanowires produced a strong luminescence feature at 3.44 eV, while a slight decrease in energy to 3.1 eV was observed at the interface between the nanowire and epilayer or kink site. No yellow luminescence was detected, further suggesting a defect free growth. Preliminary I-V measurements give mixed results, suggesting intrinsic n-type nanowires.</jats:p>
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- MRS Proceedings
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MRS Proceedings 955 2006-01-01
Springer Science and Business Media LLC