Antimony Clustering due to High-dose Implantation
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<jats:title>Abstract</jats:title><jats:p>Antimony implantation is a promising technique for fabricating ultra-shallow n<jats:sup>+</jats:sup>/p junctions for extensions of sub-100-nm n-MOSFETs. By increasing the Sb<jats:sup>+</jats:sup> implantation dose to 6×10<jats:sup>14</jats:sup> cm<jats:sup>−2</jats:sup>, sheet resistance (Rs) of an implanted layer was reduced to 260 /sq. for rapid thermal annealing (RTA) at 800°C. The obtained junction depth of 19 nm is suitable for sub-100-nm MOSFETs. However, the reduction in the sheet resistance showed a tendency to saturate. No pileup at the Si-SiO<jats:sub>2</jats:sub> interface, which was the major origin of dopant loss in lower dose cases was, observed in Sb depth profiles in this case. However, in the case of 900°C RTA, Sb depth profiles indicated that Sb was nearly immobile in the region where Sb concentration exceeded 1×10<jats:sup>20</jats:sup> cm<jats:sup>−3</jats:sup>. These results imply that the major limiting factor of Rs reduction under the highdose condition is Sb precipitation, which is different from the lower dose cases.</jats:p>
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- MRS Proceedings
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MRS Proceedings 610 2000-01-01
Springer Science and Business Media LLC