Single-electron transport through a single donor at elevated temperatures
説明
We showed that, in nanoscale doped SOIFETs, new current peaks become observable as temperature is increased. For smallest 1-disk devices, a final new tunneling current peak has been observed even at T = 100 K, indicating that such patterned-channel devices are suitable for high temperature tunneling operation. Ionization energy was estimated to be about 5 times larger than for bulk Si, due to dielectric and confinement effect.
収録刊行物
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- 2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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2012 IEEE Silicon Nanoelectronics Workshop (SNW) 1-2, 2012-06-01
IEEE