Plasma-Assisted Epitaxial Growth of Compound Semiconductors for Infrared Application

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<jats:title>ABSTRACT</jats:title><jats:p>GaSb, InSb and InAs epitaxial layers with mirror surface were grown on GaSb, GaAs, InP, Si and sapphire substrates at relatively low temperatures by plasma-assisted epitaxy (PAE) in hydrogen plasma. Carrier concentrations and Hall mobilities of undoped PAE layers at room temperature are p=6×O<jats:sup>16</jats:sup> cm<jats:sup>−3</jats:sup>; μp=750cm<jats:sup>2</jats:sup>/Vs, n=1×10<jats:sup>16</jats:sup>cm<jats:sup>−3</jats:sup>; μn=39,000cm<jats:sup>2</jats:sup>/Vs and n=7×10<jats:sup>17</jats:sup> cm<jats:sup>−3</jats:sup>; μn=21,000cm<jats:sup>2</jats:sup>/Vs for GaSb on GaAs, InSb on GaAs and InAs on InP, respectively. As the first application of PAE layers to optoelectronic devices, p-GaSb/n-GaAs heterojunction photodiodes have been demonstrated to result in remarkable reduction of dark current with photoresponse in the wavelength region between 0.85 and 1.7μm for the light incident from GaAs.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 90 1986-01-01

    Springer Science and Business Media LLC

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