High-quality a-SiGe:H produced by nanometer deposition and hydrogen plasma annealing
説明
High-quality narrow bandgap ( 10/sup -5/ S/cm and >10/sup 4/, respectively. It is shown that the metastable states are also reduced by hydrogen plasma annealing.
収録刊行物
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- Proceedings of 4th International Conference on Solid-State and IC Technology
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Proceedings of 4th International Conference on Solid-State and IC Technology 447-449, 2002-11-19
IEEE